JPH01155665A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPH01155665A JPH01155665A JP62313156A JP31315687A JPH01155665A JP H01155665 A JPH01155665 A JP H01155665A JP 62313156 A JP62313156 A JP 62313156A JP 31315687 A JP31315687 A JP 31315687A JP H01155665 A JPH01155665 A JP H01155665A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- impurity
- integrated circuit
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 230000005669 field effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 16
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 2
- 238000001451 molecular beam epitaxy Methods 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62313156A JPH01155665A (ja) | 1987-12-12 | 1987-12-12 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62313156A JPH01155665A (ja) | 1987-12-12 | 1987-12-12 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01155665A true JPH01155665A (ja) | 1989-06-19 |
| JPH046107B2 JPH046107B2 (en]) | 1992-02-04 |
Family
ID=18037784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62313156A Granted JPH01155665A (ja) | 1987-12-12 | 1987-12-12 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01155665A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1209740A3 (en) * | 2000-11-21 | 2008-03-19 | Matsushita Electric Industrial Co., Ltd. | Equipment for communication system and semiconductor integrated circuit device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2832429B1 (en) | 2012-03-30 | 2019-02-20 | NGK Insulators, Ltd. | Honeycomb shaped porous ceramic body, manufacturing method for same, and honeycomb shaped ceramic separation membrane structure |
-
1987
- 1987-12-12 JP JP62313156A patent/JPH01155665A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1209740A3 (en) * | 2000-11-21 | 2008-03-19 | Matsushita Electric Industrial Co., Ltd. | Equipment for communication system and semiconductor integrated circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH046107B2 (en]) | 1992-02-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |